A2G35S200-01SR3
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Description:
AIRFAST RF POWER GAN TRANSISTOR
Category:
Discrete Semiconductor Devices
In-stock:
In Stock
payment method:
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Shipping Method:
LCL, AIR, FCL, Express
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
RF FETs, MOSFETs
Product Status:
Active
Mounting Type:
Surface Mount
Voltage - Rated:
125 V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Noise Figure:
-
Supplier Device Package:
NI-400S-2S
Voltage - Test:
48 V
Mfr:
USA Inc.
Frequency:
3.4GHz ~ 3.6GHz
Gain:
16.1dB
Package / Case:
NI-400S-2S
Current - Test:
291 MA
Power - Output:
180W
Technology:
GaN HEMT
Current Rating (Amps):
-
Base Product Number:
A2G35
Introduction
RF Mosfet 48 V 291 mA 3.4GHz ~ 3.6GHz 16.1dB 180W NI-400S-2S
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Stock:
In Stock
MOQ: