DDTC113TLP-7
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max):
100 MA
Product Status:
Active
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Frequency - Transition:
250 MHz
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Supplier Device Package:
X1-DFN1006-3
Resistor - Base (R1):
1 KOhms
Mfr:
Diodes Incorporated
Current - Collector Cutoff (Max):
500nA (ICBO)
Power - Max:
250 MW
Package / Case:
3-UFDFN
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Base Product Number:
DDTC113
Introduction
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 250 mW Surface Mount X1-DFN1006-3
Send RFQ
Stock:
In Stock
MOQ: